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DC COMPONENTS CO., LTD.
R
2N5401
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for general purpose amplifier applications.
TO-92
.190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ
o o
Pinning
1 = Emitter 2 = Base 3 = Collector
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -160 -150 -5 -600 625 +150 -55 to +150 Unit V V V mA mW
o o
.500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36)
.050 Typ (1.27)
321
C
.050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters)
C
Electrical Characteristics o
Characteristic
(Ratings at 25 C ambient temperature unless otherwise specified)
Symbol BVCBO BVCEO BVEBO ICBO IEBO
(1)
Min -160 -150 -5 50 80 50 100 2%
Typ -
Max -50 -50 -0.2 -0.5 -1 -1 400 300 6
Unit V V V nA nA V V V V MHz pF
Test Conditions IC=-100A, IE=0 IC=-1mA, IB=0 IE=-10A, IC=0 VCB=-120V, IE=0 VEB=-3V, IC=0 IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-1mA, VCE=-5V IC=-10mA, VCE=-5V IC=-50mA, VCE=-5V IC=-10mA, VCE=-10V, f=100MHz VCB=-10V, f=1MHz, IE=0
Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage
(1)
VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT Cob
DC Current Gain
(1)
Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width
380s, Duty Cycle
Classification of hFE2
Rank Range
A
80~200
B
100~240
C
160~400

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